bandgap
英[ˈbændɡæp]
美[bændˈɡæp]
双语例句
- 1. The concept of full photonic bandgap was explained.
- 阐述了完全光子禁带的概念。
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- 2. A PMC structure with a complete photonic bandgap has been designed.
- 设计出了具有完全光子禁带的PMC结构。
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- 3. Silicon is an indirect bandgap semiconductor emitting light inefficiently.
- 硅是间接带隙半导体,不能有效地发光。
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- 4. In this paper, ANNs are applied to study of the bandgap characteristic of DGS.
- 本文针对神经网络在DGS滤波特性中的应用进行了研究。
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- 5. A novel exponential curvature-compensated bandgap reference circuit is presented.
- 提出了一种新型的指数曲率补偿带隙基准源电路。
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- 6. Therefore, we get the bandgap reference voltage with very small temperature coefficient.
- 由此得到温度系数很小的带隙基准电压。
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- 7. The ribbons are narrow enough to have an electronic bandgap and thus switching properties.
- 这种带足够窄以至于形成电学带隙,从而拥有开关性能。
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- 8. It is believed that the emission peaks were concerned with impurity level in the bandgap.
- 变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。
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- 9. The start-up circuit was design for the bandgap voltage reference circuit working normally.
- 另外设计了启动电路以确保基准电路能正常工作。
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- 10. The Electromagnetic bandgap(EBG)is a periodic structure with obvious bandstop characteristic.
- 电磁带隙结构(EBG)是一种周期性结构,具有明显的带阻特性。
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- 11. It must lose enough energy to fall past the bandgap into the area where electrons are allowed.
- 它必须失去足够的能量,属于过去的带隙纳入地方电子获准。
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- 12. Both the optical absorption coefficient and bandgap decrease with increasing in film thickness.
- 光吸收系数以及禁带宽度均随薄膜厚度的增加而下降。
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- 13. The voltage reference generator was the expansion of the bandgap circuit for saving the resources.
- 基准电压产生电路为带隙电路的扩展,节省了资源并得到了高稳定度的基准电压。
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- 14. One way of introducing a bandgap into graphene is to make extremely narrow ribbons of the material.
- 给石墨烯引入带隙的方法之一是制作极窄的石墨烯带。
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- 15. A novel compact electromagnetic bandgap structure is presented, which provides ultra-wide stopband.
- 提出了一种新颖的小型超宽阻带电磁带隙结构。
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- 16. A bandgap voltage reference circuit with good stability and high accuracy is designed in this pa - per.
- 设计了一种具有良好稳定性和高精度的带隙基准电压源电路。
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- 17. A low voltage current mode bandgap voltage reference circuit with a novel start-up circuit is designed.
- 介绍了一种低压电流模带隙电压基准电路,并提出了一种新颖的启动电路结构。
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- 18. The design of a linear temperature compensation voltage bandgap reference is based on the traditional bandgap.
- 基准电压源根据传统带隙基准温度补偿原理,设计了一级温度补偿的片上带隙基准源。
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- 19. A thick film has a red shift of direct transition bandgap than thin films due to the strong interface interaction.
- 由于厚膜中存在较强的表面相互作用,厚膜的直接跃迁禁带宽与薄膜相比发生了红移。
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- 20. Low power, low voltage and high PSRR are the main challenges in designing bandgap reference for switching regulator.
- 微功耗、低工作电压、高电源抑制比是在电源芯片中的基准源设计过程中遇到的主要挑战。
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- 21. DGS are widely applied to rf and microwave circuits to improve the performance because of its bandgap characteristic.
- 缺陷接地结构由于其带阻特性而被广泛地应用到射频微波电路中,以改善电路性能。
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- 22. The photonic crystal fiber (PCF) with a special envelop structure induces the light by photonic bandgap (PBG) effect.
- 光子晶体光纤(PCF)是一种具有特殊包层结构的光纤,它是利用光子禁带效应(PBG)来导光的。
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- 23. If the photon energy is greater than the bandgap of the cell material, then electrons are excited into the conduction band.
- 如果光子的能量高于电池材料的能带,那么电子就被激发到导带中。
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- 24. A low power CMOS bandgap voltage reference source with a start-up circuit is presented based on the bandgap voltage theory.
- 运用带隙基准的原理,提出了一种带启动电路的低功耗带隙基准电压源电路。
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- 25. The optical direct bandgap taking blue shift can be explain by quantum confinement effect effective mass approximate method.
- 针对其光学直接禁带宽度发生蓝移,使用量子限域和有效质量近似方法得到了解释。
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- 26. The inner layer of the antenna contains nanotubes with a small bandgap, and nanotubes in the outer layer have a higher bandgap.
- 天线内层是窄带隙的纳米管,与此相反,外层的纳米管则具有较宽的带隙。
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- 27. The results show that disordered structure provides strikingly extended bandgap compared with the corresponding periodic structure.
- 研究发现,无序结构光子晶体与周期结构光子晶体相比其带隙显著加宽。
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- 28. A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented.
- 本文提出了低温区高精度的禁带宽度的表达式,获得了低温区本征载流子浓度的简明公式。
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- 29. A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented.
- 本文提出了低温区高精度的禁带宽度的表达式,获得了低温区本征载流子浓度的简明公式。
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